dfnwb2*2-6l -j plastic-encapsulate mosfets CJM1216 p-channel power mosfet description the CJM1216 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltage . . this device is suitable for use as a load switching application and a wide variety of other applications. features ? advanced trench mosfet process technology ? ultra low on-resistance with low gate charge applications 0 $ 5 . , 1 * ? pwm application ? load switch ? battery charge in cellular handset maximum ratings (t a =25 unless otherwise noted) parameter symbol value u nit drain-source voltage v dss -12 gate-source voltage v gs 8 v drain current -continuous i d -16 drain current-pulsed (note 1) i dm -65 a power dissipation (note 2 , t a =25 ) 2.5 maximum power dissipation (note 3 , t c =25 ) p d 18 w thermal resistance from junction to ambient (note 4) r ja 50 thermal resistance from junction to case (note 4) r jc 6.9 /w junction temperature t j 150 storage temperature t stg -55 ~+150 dfnwb2*2-6l -j 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,may,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -12 v gate-body leakage current i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =-12v, v gs =0v -1 a on characteristics (note 5) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -0.7 -1 v v gs =-4.5v, i d =-6.7a 21 drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-6.2a 27 m ? forward transconductance g fs v ds =-10v, i d =-6.7a 40 s dynamic characteristics (note 6) input capacitance c iss 2700 output capacitance c oss 680 reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 590 pf v ds =-6v,v gs =-8v,i d =-10a 60 100 total gate charge q g 35 48 gate-source charge q gs 5 gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-10a 10 nc drain-source diode characteristics diode forward current (note 5) i s -16 a diode forward voltage(note 4) v sd v gs =0v, i sd =-8a -1.2 v notes: 1. repetitive rating: pulse width lim ited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4. surface mounted on fr4 board, t 10s. 5. pulse test: pulse with 300 s,duty cycle 2%. 6. guaranteed by design, not s ubject to production testing. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,may,2013
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -10 -20 -30 -40 -50 -1 -2 -3 -4 -5 0 20 40 60 -0 -10 -20 -30 -40 -50 0 10 20 30 40 50 60 70 80 -0 -3 -6 -9 -12 0 800 1600 2400 3200 4000 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 25 50 75 100 125 150 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 v gs =-3v thru -4.5v v gs -1.5v v gs -2v v gs =-2.5v drain current i d (a) drain to source voltage v ds (v) pulsed gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =-6.7a ta=25 pulsed v gs r ds(on) ta=25 pulsed vgs=-4.5v vgs=-2.5v on-resistance r ds(on) (m ? ) drain current i d (a) i d r ds(on) c iss c oss CJM1216 capacitance c (pf) drain to source voltage v ds (v) c rss capacitance source current i s (a) source to drain voltage v sd (v) ta=25 pulsed v sd i s -20 output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =-250ua threshold voltage 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,may,2013
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